SOURCE OF REFERENCE VOLTAGE Russian patent published in 2014 - IPC G05F1/00 

FIELD: electricity.

SUBSTANCE: device comprises a field transistor with a control p-n transition, the first transistor, with an emitter connected to a source of a field transistor, with a collector - to a power supply bus, the first resistor connected between the base of the first transistor and the power supply bus, the second resistor connected between the outlet of the device and the point of connection of the base and the collector of the second transistor, the emitter of which is connected to the common bus, the third resistor, the third and fourth transistors, besides, the third resistor is connected between the gate of the field transistor and the power supply bus, the base of the third transistor is connected to the base of the second transistor, the collector of the third transistor is connected to the point of connection of the drain of the field transistor and the base of the fourth transistor, the emitter of the third transistor is connected to the common bus, the collector of the fourth transistor is connected to the gate of the field transistor, and the emitter of the fourth transistor is connected to the device outlet.

EFFECT: increased stability of output voltage during variation of load current with preservation of high temperature stability.

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