REFERENCE-VOLTAGE SOURCE Russian patent published in 2012 - IPC G05F1/10 

FIELD: electricity.

SUBSTANCE: device contains the first transistor connected by emitter to the emitter of the second transistor; the first resistor is included between emitter of the first transistor and common bus; the second resistor is connected by the first output to the point of connection of the first transistor base with collector of the second transistor, the second output of the resistor is connected to the second transistor base and to device output; the third resistor is connected to power bus by the first output, the third transistor and field-effect transistor (FET), at that collector of the first transistor is connected to power bus, the third transistor base is connected to the second transistor base, its emitter is connected to emitter of the second transistor and collector of the third transistor is connected with the second output of the third resistor and FET source, which gate is connected to power bus and drain is connected to device output.

EFFECT: simplification of scheme with high temperature stability of output voltage.

6 dwg