FIELD: electricity.
SUBSTANCE: source of reference voltage comprises the first transistor, with an emitter connected to a common bus, with a base - to a collector of the second transistor, and with a collector - to a base of the third transistor, emitters of the second and third transistors are connected to the common bus, a control element, with the control input connected to the collector of the third transistor, with the output - to the device output, the first resistor connected between the device output and the collector of the first transistor, the second resistor, the first output connected to the device output, the third resistor, with the first output connected to the collector of the second transistor, and with the second output connected with the second output of the second resistor, the fourth, fifth and sixth resistors and a field transistor, besides, the fourth resistor is connected is connected between the base of the second transistor and a point of connection of the second outputs of the second and third resistors, the fifth resistor is connected between a supply bus and a source of a field transistor, the sixth resistor is connected between a gate of the field transistor and a supply bus, a drain of the field resistor is connected to the collector of the third transistor, and the input of the control element supply is connected to the gate of the field transistor.
EFFECT: increased loading capacity of a source of reference voltage at high temperature stability of output voltage.
1 cl, 9 dwg
Title | Year | Author | Number |
---|---|---|---|
REFERENCE-VOLTAGE SOURCE | 2011 |
|
RU2449342C1 |
REFERENCE-VOLTAGE SOURCE | 2011 |
|
RU2447477C1 |
SOURCE OF REFERENCE VOLTAGE | 2012 |
|
RU2475807C1 |
SOURCE OF REFERENCE VOLTAGE | 2011 |
|
RU2461864C1 |
SOURCE OF REFERENCE VOLTAGE OF NEGATIVE POLARITY | 2012 |
|
RU2480810C1 |
SOURCE OF REFERENCE VOLTAGE | 2013 |
|
RU2525745C1 |
TEMPERATURE STABLE RADIATION-RESISTANT REFERENCE-VOLTAGE SOURCE BASED ON DIFFERENTIAL PAIR OF FIELD-EFFECT TRANSISTORS | 2014 |
|
RU2546083C1 |
REFERENCE VOLTAGE SOURCE BASED ON TRIPLE WIDTH OF SILICON INHIBITED ZONE | 2014 |
|
RU2546079C1 |
SOURCE OF REFERENCE VOLTAGE | 2012 |
|
RU2473951C1 |
REFERENCE VOLTAGE SOURCE | 2012 |
|
RU2523956C2 |
Authors
Dates
2013-04-27—Published
2012-01-17—Filed