REFERENCE-VOLTAGE SOURCE Russian patent published in 2012 - IPC G05F1/10 

FIELD: electricity.

SUBSTANCE: device contains the first transistor by its emitter connected to the second transistor's emitter, the first resistor connected between emitter of the first transistor and common bus, the second resistor by its first output connected to the point where the first transistor base is connected with the second transistor collector, the third transistor which base is connected to the second transistor base and to device output, emitter of the third transistor is connected with emitter of the second transistor, collector of the third transistor is connected to the source of the first field transistor, which gate is connected to power bus and its drain - to the base of the fourth transistor, the third resistor is connected between source of the first field transistor and power bus, the second field transistor by its source connected to collector of the first transistor, by its gate - to power bus and by its drain - to the point where base and collector of the fifth transistor is connected with the base of the sixth transistor, emitters of the fifth transistor and the sixth transistor.

EFFECT: simplification of scheme with high temperature stability of output voltage.

10 dwg