PHOTOSENSITIVE CHARGE-COUPLED DEVICE Russian patent published in 2014 - IPC H01L27/148 

FIELD: physics.

SUBSTANCE: in a photosensitive charge-coupled device, having a first type conductivity substrate in its surface portion, a first type conductivity photosensitive region is further formed within a second type conductivity bulk transfer channel region, adjacent to and having ohmic contact with a photosensitive region which facilitates charge transfer, said first type conductivity photosensitive region having a region of overlap with a stop-diffusion region to form an ohmic contact in said overlap region. The underlying second type conductivity bulk transfer channel region has a lower impurity concentration than the bulk transfer channel region under the photosensitive region which facilitates charge transfer, wherein the potential value of the bulk transfer channel under the additional photosensitive region is lower than the potential value of the bulk transfer channel under the photosensitive region which facilitates charge transfer, and the depth of the additional photosensitive region in the transfer channel region matches the penetration depth of ultraviolet radiation into said semiconductor substrate.

EFFECT: designing a photosensitive charge-coupled device with higher sensitivity to ultraviolet radiation.

2 cl, 9 dwg, 1 tbl