INFRARED RADIATION SENSITIVE STRUCTURE AND METHOD OF MAKING SAID STRUCTURE Russian patent published in 2010 - IPC H01L31/101 

FIELD: physics.

SUBSTANCE: infrared radiation sensitive structure having a substrate whose top layer is made from CdTe, a 10 mcm thick working detector layer made from Hg_1-xCd_xTe, where x=x_d=0.2-0.3, a 0.1-0.2 mcm thick insulating layer made from CdTe, and a top conducting layer with thickness of approximately 0.5 mcm also has a 0.5-6.0 mcm thick lower variband layer between the substrate and the detector layer, where the said variband layer is made from Hg_1-xCd_xTe, where the value of x gradually falls from a value in the range of 1-(x_d+0.1) to a value x_d, between the working detector layer and the insulating layer, a top variband layer with thickness of 0.03-1.00 mcm made from Hg_1-xCd_xTe where the value of x gradually increases from a value xd to a value in the range of 1-(x_d+0.1), and dielectric layers between the insulating layer and the top conducting layer. Disclosed also is a method of making the said structure.

EFFECT: possibility of making a highly stable infrared sensitive structure with broad functional capabilities.

12 cl, 1 dwg