FIELD: manufacture of multi-element integration photo-receivers, for example, for video cameras and digital photography.
SUBSTANCE: photo-receiving cell is made on silicon substrate of first conductivity type with non-rectifying contact and includes: first, second and third areas, which have mutual position and configuration, ensuring forming of first and second channels for diffusion of minor charge carriers, generated in areas of substrate, located below first and second potential barriers in accordance to first and third p-n barrier. Length of channels does not exceed diffusion length of minor charge carriers.
EFFECT: increased spatial resolution of image being projected, dynamic range and decreased cell area.
6 dwg
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