METHOD OF PRODUCING SILICON p-i-n PHOTODIODE Russian patent published in 2014 - IPC H01L27/14 

FIELD: physics.

SUBSTANCE: invention relates to production of silicon p-i-n photodiodes which are sensitive to radiation with wavelength of 0.9-1.06 mcm. The method of producing a silicon photodiode according to the invention includes a thermal oxidation operation, diffusion of phosphorus to form n⁺-type conductivity regions, diffusion of phosphorus for gettering of impurities, diffusion of boron to form p⁺-type conductivity regions, forming double-layer ohmic contacts to a photosensitive region, a collar ring region and a p⁺-type conductivity contact layer by depositing a gold film with a titanium or chromium sublayer. After thermodiffusion operations, before forming ohmic contacts, the plates with p-i-n structures are further annealed at temperature of about 400°C in a nitrogen or hydrogen atmosphere for two hours.

EFFECT: invention reduces the level of dark current (not less than by an order) and high percentage of non-defective devices.

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