METHOD OF MAKING SHORT-RANGE PARTICLE DETECTOR Russian patent published in 2010 - IPC H01L21/02 

FIELD: physics; semiconductors.

SUBSTANCE: invention relates to semiconductor engineering. When making a short-range particle detector, through ion implantation into a window, a silicon surface layer is doped with a p-type impurity on the p-n junction side, and on the ohmic side with an n-type impurity with a dose of 10¹⁵-10¹⁶ with ion energy of 500-2000 keV. The implanted layers are calcined at temperature 850-950°C for 1-2 hours. Chemical etching is then carried out in the window on the ohmic side at a depth of the mean path of the ions implanted into the silicon.

EFFECT: design of a short-range particle detector with reduced thickness of dead layers on the surface and low level of dark current.

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