METHOD OF PRODUCING A SILICON PHOTODIODE Russian patent published in 2019 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: invention relates to production of silicon photodiodes (PD), sensitive to radiation with wavelength of 0.3–1.06 mcm, which can be used in electronic optical equipment. One of the main parameters of such PD is the value of dark current at operating voltage, which determines PD noise level and, consequently, its threshold sensitivity. Objective of the present invention is to reduce the level of dark current (at least by an order of magnitude) and increase the percentage of non-defective devices. Solution of the problem is ensured by the fact that to further reduce the concentration of generation-recombination centres (GRC) in the space charge regions (SCR), gettering regions (heavily doped n+-layer of phosphorus) are formed near the p-n junction on the same side of the plate, which considerably increases the gradient concentration of GRC and, consequently, diffusion flow of removed GRC from SCR to the getter.

EFFECT: due to this reduced concentration of generation centres in SCR, which reduces dark current PD.

1 cl, 2 dwg