METHOD OF MANUFACTURING SILICON PHOTODYOD Russian patent published in 2018 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: invention relates to technology for manufacturing silicon photodiodes (PDs) sensitive to radiation with wavelengths of 0.4–1.0 mcm and manufactured on silicon of n-type conductivity, which are intended for use in various electronic optical equipment with high threshold sensitivity. Invention provides reduction in spread in sensitivity and dark current and increase in percentage of yield of suitable instruments. Technical result is achieved by carrying out following processes for creating PD structure: thermal oxidation, boron diffusion to create regions p⁺-type of conductivity (photosensitive areas), diffusion of phosphorus into rear surface of plate for gettering of contaminants, annealing of plates with formed structures at temperature ~650 °C in atmosphere of nitrogen for 4 hours, formation of ohmic contacts.

EFFECT: significant increase in values and decrease in dispersion of lifetime of minority charge carriers over plate, and, accordingly, improvement in parameters of photodiodes and their homogeneity.

1 cl, 4 dwg, 1 tbl