METHOD OF MAKING IONIZING RADIATION AND LIGHT SENSOR Russian patent published in 2024 - IPC H01L21/02 G01T1/24 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to the technology of making semiconductor devices intended for converting the effect of ionizing radiation and light into an electrical signal. Sensor for converting the effect of ionizing radiation and light into an electrical signal. Method of producing an ionizing radiation and light sensor, comprising etching silicon on a semiconductor plate cut from an ingot of ultrapure silicon of n-type conductivity, chemical washing of semiconductor plate, formation of silicon oxide layer by thermal oxidation in atmosphere of dry oxygen with addition of chlorine-containing component, implantation of p-type impurity ions into the working side of the plate and n-type impurity ions into the non-working side of the plate, a second chemical washing, application of an aluminium layer, two-stage post-implantation annealing, wherein both chemical washes of the plate are carried out in a solution of diluted hydrofluoric acid, the second oxidation is carried out in two steps: first step is carried out in a dry oxygen atmosphere, including a chlorine-containing component; second step is carried out in a nitrogen atmosphere with the addition of oxygen, which includes a chlorine-containing component, followed by diffusion of the n-type impurities and the last implantation of p-type impurities, further, chemical treatment is carried out with finishing freshening in a diluted solution of hydrofluoric acid for at least 5 seconds, then two-stage post-implantation annealing is performed: first annealing at temperature of 800–900 °C and second annealing at temperature of 675–775 °C in an inert atmosphere or in an inert atmosphere with oxygen content.

EFFECT: invention enables to manufacture a highly sensitive element of the detector, as well as simpler manufacturing thereof based on a planar technology.

1 cl, 1 dwg