FIELD: physics.
SUBSTANCE: disclosed is a method for contactless determination of non-uniformity of the temperature field in semiconductor light sources, which includes measuring temperature at control points of the source structure, wherein temperature sensor functions are performed by components of the source structure itself: the p-n junction of the chip and the fluorescent coating, and the heat-sensitive parameter used is the spectral width of radiation at the level of 0.5 times the maximum value.
EFFECT: providing a competitive edge over fluorescent light sources; semiconductor light sources should have a longer life of at least 100000 hours; improved design and providing optimum thermal conditions of the chip and the fluorescent coating.
1 tbl, 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF MAKING SEMICONDUCTOR LIGHT SOURCE | 2011 |
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| LIGHTING DEVICE | 2012 |
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| LIGHT-EMITTING DIODE RADIATION SOURCE FOR TRANSPORT CONTROL SYSTEMS | 2009 |
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