METHOD OF MAKING SEMICONDUCTOR LIGHT SOURCE Russian patent published in 2013 - IPC H01L33/50 B82B3/00 

FIELD: physics.

SUBSTANCE: invention can be used in making consumer semiconductor sources of white light, including street and home lighting devices, and can be used in the technology of producing light-emitting diode panels. When making a semiconductor light source using an existing method by assembling a crystal into a chassis and applying a phosphor layer on its surface, new operations and a new sequence for performing said operations are employed: applying an antireflection coating on the surface of the crystal, applying onto the antireflection coating a parting layer of polymer material with a low refraction index, e.g., an acrylate, and then applying a phosphor on that layer.

EFFECT: invention increases output of blue radiation from the semiconductor crystal, reduces the value of light entering the crystal, and reduces the value of green and red radiation absorbed therein, which is converted by the phosphor, and significantly increases overall quantum efficiency of the light source.

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