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2 539 771

(13)

(51)

IPC

H01L39/24(2006-01-01)

(21) (22)

Application

2013141315/28, 2013-09-10

(24)

Start date

2013-09-10

(22)

Actual filing date

2013-09-10

(45)

Published

2015-01-27

(72)

Inventor

Grigorashvili Jurij Evgen'EvichBabushkin Timur VladimirovichPoljakova Elena Viktorovna

(73)

Holder

Federal'Noe Gosudarstvennoe Avtonomnoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Issledovatel'Skij Universitet

FABRICATION OF SEMICONDUCTOR DETECTOR Russian patent published in 2015 - IPC H01L39/24

Abstract RU 2539771 C1

FIELD: process engineering.

SUBSTANCE: this invention can be used for production of superconductors and high-sensitivity receivers of electromagnetic radiation. This method comprises making of film from high-temperature superconducting material that represents a monophase textured superconductor (Bi,Pb)₂Sr₂Ca₂Cu₃O₁₀ at dielectric substrate by magnetron sputtering from target. Sensitive element, antenna and feed lines are produced in signal process on one ply of formed high-temperature superconducting film (Bi,Pb)₂Sr₂Ca₂Cu₃O₁₀.

EFFECT: possibility to up the terahertz radiation detector working temperature, expanded operating range of receiving antenna, higher reliability.

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RU 2 539 771 C1

Authors

Grigorashvili Jurij Evgen'Evich

Babushkin Timur Vladimirovich

Poljakova Elena Viktorovna

Dates

2015-01-27—Published

2013-09-10—Filed