FIELD: electronic devices using high-sensitivity systems built around high-temperature film-type superconducting quantum interface devices.
SUBSTANCE: proposed method for manufacturing superconducting device includes formation of Josephson junction in high-temperature film on single-crystalline MgO substrate by means of nuclear-power microscope; high-temperature superconductor film material is (Bi,Pb)2Sr2Ca2Cu3O10; track is produced by photolithographic method and nuclear-power microscope probe is drawn across this track to form variable-thickness area for producing Josephson junction.
EFFECT: improved useful parameters of superconducting devices, enhanced their operating characteristics and reliability.
1 cl, 3 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| SUPERCONDUCTOR DEVICE MANUFACTURING METHOD | 2006 |
|
RU2308123C1 |
| FABRICATION OF SEMICONDUCTOR DETECTOR | 2013 |
|
RU2539771C1 |
| INDEPENDENT SELF-COOLED NANOINSTRUMENT AND ITS FORMATION METHOD | 2013 |
|
RU2555512C2 |
| METHOD OF SQUID FORMATION WITH SUBMICRON JOSEPHSON JUNCTIONS MOUNTED IN HIGH-TEMPERATURE SUPERCONDUCTOR FILM | 2006 |
|
RU2325005C1 |
| JOSEPHSON CRYOTRON AND METHOD OF MAKING SAID CRYOTRON | 2007 |
|
RU2364009C1 |
| PROCESS OF MANUFACTURE OF HIGH-TEMPERATURE SUPERCONDUCTING JOSEPHSON JUNCTION | 1997 |
|
RU2107358C1 |
| SHF-AMPLIFIER BASED ON HIGH-TEMPERATURE SQUID WITH FOUR JOSEPHSON CONTACTS | 2013 |
|
RU2544275C2 |
| METHOD OF MAKING SUPERCONDUCTING THIN FILM WITH REGIONS WITH DIFFERENT VALUES OF CRITICAL CURRENT DENSITY | 2008 |
|
RU2375789C1 |
| SUPERCONDUCTING QUANTUM INTERFERENCE TRANSMITTER AND PROCESS OF ITS MANUFACTURE | 1997 |
|
RU2133525C1 |
| METHOD FOR MANUFACTURING OF HIGH-TEMPERATURE SUPERCONDUCTING JOSEPHSON JUNCTION | 1996 |
|
RU2105390C1 |
