METHOD OF RADIATION-INDUCED THERMAL OXIDISING OF SILICON Russian patent published in 2015 - IPC H01L21/26 

Abstract RU 2540462 C1

FIELD: physics.

SUBSTANCE: invention relates to the field of microelectronics, in particular to technology of fabrication of oxide layer being the basic building unit of mosfet-based integrated circuits. In the method of radiation-induced thermal oxidising of silicon consisting in thermal oxidising of silicon in oxygen flow at action of gamma radiation generated in the oxidising camera at decay of O15 isotopes, formed in gamma loop on the basis of a linear electron accelerator in a substance, circulating in the gamma loop containing oxygen atoms, oxidising is performed at the at the temperature below 1000°C, and the power density of the gamma radiation dose in silicon amounts minimum 2.35 mcg/cm2 s.

EFFECT: invention provides a possibility of obtaining of silicon dioxide films with higher shorting voltage and smaller sensitivity to ionising radiation, that provides a possibility for creation of mosfets and integrated circuits with higher radiation stability.

3 cl, 2 dwg, 1 tbl

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RU 2 540 462 C1

Authors

Voronov Sergej Aleksandrovich

Voronov Jurij Aleksandrovich

Samotaev Nikolaj Arkad'Evich

Simakov Andrej Borisovich

Sugrobova Tat'Jana Anatol'Evna

Dates

2015-02-10Published

2013-08-09Filed