METHOD OF RADIATION-INDUCED THERMAL OXIDISING OF SILICON Russian patent published in 2015 - IPC H01L21/26 

FIELD: physics.

SUBSTANCE: invention relates to the field of microelectronics, in particular to technology of fabrication of oxide layer being the basic building unit of mosfet-based integrated circuits. In the method of radiation-induced thermal oxidising of silicon consisting in thermal oxidising of silicon in oxygen flow at action of gamma radiation generated in the oxidising camera at decay of O¹⁵ isotopes, formed in gamma loop on the basis of a linear electron accelerator in a substance, circulating in the gamma loop containing oxygen atoms, oxidising is performed at the at the temperature below 1000°C, and the power density of the gamma radiation dose in silicon amounts minimum 2.35 mcg/cm² s.

EFFECT: invention provides a possibility of obtaining of silicon dioxide films with higher shorting voltage and smaller sensitivity to ionising radiation, that provides a possibility for creation of mosfets and integrated circuits with higher radiation stability.

3 cl, 2 dwg, 1 tbl