FIELD: physics.
SUBSTANCE: invention relates to the field of microelectronics, in particular to technology of fabrication of oxide layer being the basic building unit of mosfet-based integrated circuits. In the method of radiation-induced thermal oxidising of silicon consisting in thermal oxidising of silicon in oxygen flow at action of gamma radiation generated in the oxidising camera at decay of O15 isotopes, formed in gamma loop on the basis of a linear electron accelerator in a substance, circulating in the gamma loop containing oxygen atoms, oxidising is performed at the at the temperature below 1000°C, and the power density of the gamma radiation dose in silicon amounts minimum 2.35 mcg/cm2 s.
EFFECT: invention provides a possibility of obtaining of silicon dioxide films with higher shorting voltage and smaller sensitivity to ionising radiation, that provides a possibility for creation of mosfets and integrated circuits with higher radiation stability.
3 cl, 2 dwg, 1 tbl
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Authors
Dates
2015-02-10—Published
2013-08-09—Filed