METHOD OF MAKING IONISING RADIATION SENSOR Russian patent published in 2016 - IPC G01T1/18 

FIELD: physics.

SUBSTANCE: sensor is formed on a polished plate which is cut from an ingot of n-type ultrapure silicon, for which the method comprises consecutively performing the first chemical washing of the plate in a surfactant solution containing complexons, forming a layer of silicon oxide by thermal oxidation in an atmosphere of dry oxygen with the addition of chlorine-containing components, implanting p-type impurity ions into the working side of the plate and n-type impurity ions into the non-working side of the plate at a temperature not lower than 50°C with the implantation energy of not more than 200 keV and with an implantation dose of not more than 1000 mcC/cm², repeating chemical washing of the plate in a surfactant solution containing complexons, forming a layer of silicon oxide by thermal oxidation in an atmosphere of dry oxygen with the addition of chlorine-containing components, repeating the implantation of p-type impurity ions into the working side of the plate and n-type impurity ions into the non-working side of the plate at a temperature not higher than 25°C with the implantation energy of not more than 200 keV, depositing an aluminium layer on both sides of the plate, forming an ohmic contact by burning aluminium and depositing a passivating coating on the working side of the plate, and then performing two-step post-implantation annealing.

EFFECT: producing a detector element with higher sensitivity, based on the planar technology.

15 cl, 8 dwg