METHOD FOR INCREASING RADIATION RESISTANCE OF STATIC RAM MICROCIRCUITS ON STRUCTURES "SILICON ON SAPPHIRE" Russian patent published in 2020 - IPC H01L21/8238 

FIELD: microelectronics.

SUBSTANCE: invention relates to microelectronics and can be used in designing a radiation-resistant electronic component base. In the method of increasing radiation resistance of microcircuits of static RAM on structures "silicon on sapphire" doping of p-pockets of n-channel transistors, as most sensitive to ionizing radiation, performing two operations of boron implantation through a buffer layer of silicon dioxide with increase of ion energy and implantation of BF₂⁺ ions with minimum energy, providing for channeling of the transistor, subsequent annealing of radiation defects is performed at temperatures from 850 °C to 900 °C, wherein doping doses are selected so that after thermal activation uniform distribution of impurity with concentration in range of 1⋅10¹⁷ cm^-3 to 3⋅10¹⁷ cm^-3 in the source p-n junction, doping of capacitor plates is carried out with boron ions to obtain a layer of p-type conductivity, and low-doped regions of sources-effluents are made with ions of phosphorus and boron respectively with doses in range from 3.75⋅10¹³ ion/cm² to 4.5⋅10¹³ ion/cm².

EFFECT: high levels of radiation resistance of microcircuits of static RAM, made on structures "silicon on sapphire" (SOS), effects of accumulated dose and pulsed ionizing radiation.

4 cl, 2 dwg