FIELD: microelectronics.
SUBSTANCE: proposed method for enhancing radiation resistance of CMOS circuit components on SOI substrate includes development of work and insulation regions of circuit on SOI substrate, doping of silicon work regions by ionic implantation of boron, implantation of silicon-hidden oxide interface with fluoride ions at dose rate of 1012 to 1014 ion/cm2, chemical cleaning of surface, formation of gate insulator, formation of gates, doping and annealing of drain-source regions, and metal deposition.
EFFECT: enhanced reliability of complementary metal-oxide-semiconductor circuits on silicon-on-insulator substrate, facilitated manufacture.
1 cl, 2 dwg
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