METHOD FOR LOW-TEMPERATURE GROWTH OF SILICON OXIDE Russian patent published in 2014 - IPC C30B33/04 H01L21/316 C30B29/18 

FIELD: chemistry.

SUBSTANCE: invention relates to low-temperature micro- and nanoelectronic techniques and can be sued to design radiation-proof integrated circuits and power semiconductor devices. Silicon oxide is obtained by heating silicon in an oxygen atmosphere to 250-400°C with a stream of electrons with density in the range of 2.5·10¹³-10¹⁴ cm^-2·s^-1 with energy of 3.5-11 MeV.

EFFECT: obtaining high-quality low-temperature silicon oxides with parameters that are typical for high-temperature thermal oxides: surface state density (N_ss less than 10¹¹ cm^-2), maximum critical field value (E_cr greater than 2·10⁵ V/cm), minimum voltage threshold range (∆V_t less than 0,1 V) and high radiation resistance (greater than 10⁶ rad).

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