METHOD OF DETERMINATION OF ELECTRON LIFETIME IN ACTIVE RANGE OF THE SOLID-STATE INJECTION LASER DIODE Russian patent published in 2008 - IPC G01R31/26 

FIELD: optical data engineering.

SUBSTANCE: method of determination of the carrier lifetime in the active range of the solid-state injection laser diode incorporates measuring the laser diode amplitude response used to define the electron lifetime. In compliance with this invention, a laser diode is furnished with an outer re-adjustable resonator made up of a microscope objective and a flat mirror the alignment of which allows generating the radiation with a maximum constant component of output laser power W with a maximum length of outer resonator L_out, a variable component of injection current δI(Δv) at the outer resonator longitudinal mode beat frequency of Δv=c/2(L_out+nL_in) is selected, the length of outer resonator L_out, at constant W, is reduced to L*_out corresponding to the decrease in variable current component of injection current δI(Δv) of √2 times, and the electron life time is defined from the proposed expression relating the aforesaid magnitudes.

EFFECT: wider range of measurement of lifetime of the carriers in the active range of solid-state lasers (chances of measurements in a picosecond range) with a simpler instrumentation.

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