FIELD: power industry.
SUBSTANCE: invention relates to conversion of thermal energy into electric by means of semiconductor thermoelectric generators. Essence of the invention: the thermoelectric generator contains at least one layer of the semiconductor material Sm1+xLnyS based on samarium sulphide alloyed by atoms Ln of lanthanides family located between current contacts. The concentration of x samarium atoms in the layer amounts x≤0.2, concentration of Ln atoms amounts for gadolinium Gd or cerium Ce y≤0.15, for Europium Eu or ytterbium Yb y≤0.2.
EFFECT: increase of generated voltage up to 5 V (thermo-EMF), increase of maximum electric power up to several hundreds mkW.
3 cl, 9 dwg
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