METHOD OF SEMICONDUCTING CHALCOGENIDE LAYERS PRODUCTION Russian patent published in 1996 - IPC

FIELD: radioelectronics, production of fine-film tensoresistors, thermal resistors, magnetic resistors, information recording means. SUBSTANCE: method provides for realization of preliminary synthesis of dithiocarbamate complex in alcohol solution of lanthanide salt and sodium diethyldithiocarbamate with dipyridyl. As a result dipyridyldithiocarbomate of lanthanide, that is dissolved in pyridine till concentration of 0.05 - 0.10 M. The solution is sprayed and deposited on substrate heated up to 200 - 300 C. Sulfides layers of corresponding lanthanides are produced. Method allows to produce lanthane sulfide layers of 05 mcm thick, samarium sulfide layers of 15 mcm thick, thorium sulfide layer of 0.5 mcm. Their growth speeds are 10 A/C, 15 A/C and 5 A/C. EFFECT: improved process. 1 dwg