SEMICONDUCTOR OXYGEN SENSOR Russian patent published in 2015 - IPC G01N27/12 

FIELD: measurement equipment.

SUBSTANCE: invention relates to the field of gas analysis, in particular, to detecting devices used for registration and measurement of oxygen content. A gas sensor according to the invention comprises a dielectric substrate with the applied layer of the semiconductor material with thickness from 0.07 mcm to 0.2 mcm. Metal electrodes are applied onto the layer. Semiconductor material is polycrystal material of composition Sm_1-xLn_xS, where x changes from 0 to 0.14, and Ln is one of elements: La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu.

EFFECT: invention makes it possible to make a sensor for measurement of oxygen content having higher sensitivity.

2 cl, 3 dwg, 4 ex