THERMOELECTRIC GENERATOR (ALTERNATIVES) AND METHOD FOR ITS MANUFACTURE Russian patent published in 2007 - IPC H01L37/00 

FIELD: heat-to-electricity converters built around film structures.

SUBSTANCE: proposed thermoelectric generator has polycrystalline semiconductor layer disposed between metal current contacts. Mentioned layer is composed of samarium sulfide Sm_{1 + x}S, where 0 < x ≤ 0.17, x being monotonously varying in direction perpendicular to layer boundary surfaces from one current contact to other. Method for manufacturing proposed thermoelectric generator includes covering hot metal surface of substrate with polycrystalline semiconductor layer applied by discrete vacuum evaporation. Substrate functions as first current contact. Originally evaporated layer is composed of samarium monosulfide. Substrate temperature is monotonously raised in the course of layer evaporation from initial to end value chosen between 250 and 600 °C; second current contact is connected to mentioned layer.

EFFECT: ability of operating without temperature gradient at high electromotive force.

5 cl, 2 dwg