METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE Russian patent published in 2009 - IPC H01L21/205 

FIELD: physics, conductors.

SUBSTANCE: invention is related to the field of semiconductor equipment and may be used in manufacturing of such devices as, for instance heterotransient field transistors (HEMT), bipolar transistors (BJT), heterobipolar transistors (HBT), p-i-n diodes, diodes with Schottky barrier and many more. In method for manufacturing of semiconductor device, including growth of polycrystalline diamond on basic substrate, epitaxial auxiliary layers and epitaxial structure of semiconductor device on the basis of wide-zone III-nitrides, on the surface of basic substrate they form auxiliary epitaxial layers, one of which serves as the basic for growth of epitaxial structure of semiconductor device on the basis of wide-zone III-nitrides, on auxiliary epitaxial layers they grow polycrystalline diamond, and after diamond growth basic substrate is removed together with auxiliary epitaxial layers down to basic layer, on which epitaxial structure of semiconductor device is grown on the basis of wide-zone III-nitrides. To grow epitaxial structure of III-nitrides, it is preferable to grow layer Al_x Ga_1-xN, where 0≤x≤1 as basic layer in system of auxiliary epitaxial layers.

EFFECT: simplified technology of devices manufacturing, increase of their capacity and almost complete elimination of structure curve.

3 cl, 4 dwg