METHOD FOR PRODUCING HETEROEPITAXIAL LAYERS OF III-N COMPOUNDS ON MONOCRYSTALLINE SILICON WITH 3C-SIC LAYER Russian patent published in 2021 - IPC H01L21/20 B82B3/00 

FIELD: semiconductor technology.

SUBSTANCE: invention relates to semiconductor technology. The method is intended for producing heteroepitaxial layers of metal nitride compounds of group III (III-N), such as AlN, GaN, AlGaN and others, on monocrystalline silicon substrates. The III-N connections are used to create semiconductor power and microwave electronics devices. The method consists in the initial formation of a solid monocrystalline layer of silicon carbide of a cubic polytype (3C-SiC) with a thickness not exceeding the critical thickness thereof on the surface of a silicon substrate. On the surface of 3C-SiC, the first layer of aluminium nitride is grown at a temperature of not more than 1000°C and the second layer of aluminium nitride at a temperature of not more than 1250°C. The supergrille of the composition AlN/Al_xGa_1-xN (0,5≥Х≥0,3) with the thickness of alternating layers of 10-15 nm with a total thickness of at least 200 nm. A multilayer buffer composition of the Al_xGa_1-xN composition is produced, where X decreases from 0.3 to 0 as the structure grows. Finally, the monocrystalline layer of gallium nitride (GaN) of hexagonal orientation is grown.

EFFECT: invention enables increasing the structural quality and reducing the mechanical stresses of heteroepitaxial layers of III-N compounds on monocrystalline silicon.

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