METHOD OF FORMING POSITIVE PHOTORESIST MASK (VERSIONS) Russian patent published in 2015 - IPC G03C1/52 H01L21/312 C08K5/16 C08K5/28 

FIELD: chemistry.

SUBSTANCE: group of inventions relates to methods of producing semiconductor devices on a solid-state body using light-sensitive compositions, e.g., photoresist materials, containing diazo-compounds as light-sensitive substances, and particularly to methods of forming a positive photoresist mask, which can be used in microelectronics to produce articles using techniques which include a photolithography step. A method of forming a positive photoresist mask includes depositing a positive photoresist on a substrate, the photoresist containing novolac resin and an ortho-naphthoquinone diazide compound which is used as a light-sensitive component, drying, exposing and developing. Immediately before depositing the photoresist composition on the substrate, 1,3-dinitrobenzylidene urea, or 1,5-diphenylsemicarbazide, or N,N'-methylene-bisacrylamide is added in amount of 5-15% with respect to the amount of the ortho-naphthoquinone diazide compound.

EFFECT: improved quality of the edge of the photoresist mask and longer service life of the photoresist.

3 cl, 1 tbl