METHOD OF MAKING RESIST MASK WITH WIDE IMAGE RESOLUTION RANGE Russian patent published in 2017 - IPC H01L21/27 

FIELD: physics.

SUBSTANCE: method of making a resist mask with a wide image resolution range, including, at the first step, formation in a deposited positive photoresist areas of the resist mask with low image resolution by photolithography and, at the second step, obtaining on areas of said photoresist that are protected from light exposure during photolithography, elements of the resist mask with high image resolution by selective mechanical removal of the photoresist layer using the probe of an atomic-force microscope, at the second step on areas of the positive photoresist intended for obtaining elements of the resist mask with high image resolution, in places of non-image fragments of said elements, the probe of the atomic-force microscope is used form narrow recesses with high resolution under said fragments, after which in order to increase the dimensions of said recesses to the required dimensions of said non-image fragments, the entire surface of the resist mask is exposed to light with a radiation dose which increases solubility of the positive photoresist without exceeding its lower threshold in a solubility interval determined by the process at the second step, and subsequent development of elements of the resist mask with high image resolution.

EFFECT: development of a method of making a positive resist mask with a wide image resolution range.

4 cl, 4 dwg