FIELD: image forming devices.
SUBSTANCE: invention relates to negative photoresists for the formation of topological elements of microelectronic devices using "explosive" photolithography. Composition of a negative photoresist for "explosive" photolithography is proposed, containing (wt%) phenol-formaldehyde resin (25.0–40.0), hexamethoxymelamine (5.0–8.0), α-(4-tosyloximino)-4-methoxybenzyl cyanide (1.0–2.0), an organic base (0.04–0.20), fluorine-lifatic ether (0.1–2.0), Tinuvin 1130 (1.0–10.0) and organic solvents (50.0–66.0).
EFFECT: suggested photoresist composition allows to obtain a clear pattern of the photomask and increase the negative angle of the photoresist mask, which improves the quality of carrying out "explosive" photolithography.
1 cl, 2 dwg, 11 ex
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