FIELD: metallurgy.
SUBSTANCE: method includes formation of the melted zone 12 between polycrystalline billet 5 and side surface of the horizontally located cylindrical seed crystal 6, holding of the melted zone for time period necessary to stabilise the thermal conditions of growth of monocrystal disk, melt directing to side surface of the seed crystal during movement of the seed crystal in vertical direction of monocrystal growth and seed crystal rotation in direction of crystallization front attack, at that during growth the current diameter of the monocrystal disk is automatically measured, based on the measurement results the speed of the billet 5 and seed crystal 6 movement and rotation is set, the seed crystal movement during growth is performed continuously for the entire process of growth of the monocrystal disk. The method is implemented in the device including growth chamber 1 with top 3 and bottom 2 stocks for movement of the respectively polycrystalline billet 5 and seed crystal 6, additional drive 4 for liquid metal directing from the melting zone to the side surface of the seed crystal 6, installed on shaft 7 of the additional drive 4. The device additionally has system of automatic control of polycrystalline billet and seed crystal rotation and movement connected with bottom 2 and top 3 stocks, and with additional drive 4. The bottom stock 2 is mechanically connected with the additional drive 4 converting rotation axis of the bottom stock 2 from vertical position to the horizontal.
EFFECT: assurance of stability growth of monocrystal disk with large diameter, and increased output of suitable products by means of state stabilization of the melted zone during growth.
5 cl, 3 dwg
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Authors
Dates
2015-06-20—Published
2013-11-05—Filed