PROCEDURE OF TUNGSTEN TUBULAR CRYSTALS GROWTH AND FACILITY FOR IMPLEMENTATION OF THIS PROCEDURE Russian patent published in 2009 - IPC C30B13/22 C30B13/34 C30B29/02 C30B29/66 

FIELD: metallurgy.

SUBSTANCE: initially, treated tubular stock 4 out of tungsten is assembled on lower support tube 2 of holder, then circular inoculating crystal 7 with known orientation of growth axis is arranged on upper part of tubular stock 4 and it is secured to treated tubular stock 4 and to upper support pipe 8 of holder; further tubular stock 4 with inoculating crystal 7 is fixed in holder by means of central support rod 3 and support shaft 1 with circular groove for its centering; then treated tubular stock 4 is subjected to preliminary vacuum annealing at before-melting temperatures directly in vacuum melting chamber. Further there is performed growth of tubular crystal 6 on circular inoculating crystal 7 of 10 mm height by means of treatment of the tubular stock with zone re-melting under effect of electronic beam onto contact region between the circular inoculating crystal and the treated tubular stock, simultaneously rotating the treated tubular stock around axis passing through the holder, when a source of electrons moves along the growing tubular crystal 6 along the whole length of the treated tubular stock 4.

EFFECT: massive tubular crystals of tungsten with upgraded structure quality and increased output of finished products.

2 cl, 1 ex, 3 dwg