FIELD: monocrystals.
SUBSTANCE: invention relates to technology for production of titanium dioxide TiO2 monocrystal, which is a wide-gap semiconductor for use in corrosion-resistant coatings, pigments, gas sensors, medical implants, optical active coatings, photocatalysis, solar energy. A method for producing a monocrystal of titanium dioxide by crucibleless zone melting in an air atmosphere includes forming a workpiece in the form of a bar by pressing a powder from TiO2 and sintering for 6 hours in air, forming a monocrystal seed from TiO2, placing an upper rod with a workpiece above the seed placed on the lower rod, melting the workpiece and the seed, growing a TiO2 monocrystal with simultaneous vertical and rotational movement of the upper rod with the workpiece, whereas ТiO2 powder is preliminary annealed at 1200°C for 6 hours to form a polycrystal workpiece, the resulting bar is sintered at a temperature of 1350°C, and the crystal is grown in the vertical direction at a speed of movement of the upper rod with a workpiece of 8-12 mm/h, a speed of its rotation of 1-4 rpm and a speed of movement of the lower rod with the seed of 10-14 mm/h, with no rotation.
EFFECT: resulting titanium dioxide single crystal has a stable tetragonal structure, comprises only one phase, has a minimum imperfection, and is characterized by the stability of properties under high-temperature effects.
1 cl, 3 dwg, 2 ex
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Authors
Dates
2023-03-22—Published
2022-09-08—Filed