FIELD: chemistry.
SUBSTANCE: method includes treating the surface of crystalline silicon by electrochemical etching in hydrofluoric acid solution with concentration of 20-30% while supplying current with surface density of 750-1000 mA/cm2 for 5-30 s to obtain hydrophobic silicon or supplying current with surface density of not more than 650 mA/cm2 for 5-30 s to obtain hydrophilic silicon.
EFFECT: method enables to obtain a surface with multimodal nano- or microporosity in a single step.
4 dwg
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Authors
Dates
2015-07-10—Published
2014-08-25—Filed