METAL-DIELECTRIC STRUCTURE AND METHOD OF ITS MANUFACTURING Russian patent published in 2015 - IPC H01G4/30 B82B1/00 

FIELD: electricity.

SUBSTANCE: metal-dielectric structure and method of its manufacturing are related to electronic industry and electronic engineering and may be used both in modern energy-saving systems and components being an integral part of modern processors, in particular for development of microsized and nanosized electromechanical systems. The metal-dielectric structure consists of dielectric and conducting layers made as an assembly of capillaries filled with metals to the required length, at that conducting layers are etched on selective basis at different butt ends and metalised. The conducting layers are represented by two different types of electroconductive materials etched on selective basis at different butt ends, at that the conductive layers may be made of semiconductor materials, conducting glass, carbon nanoparticles and nanotubes while the dielectric layers may be made of optical and electron-tube glass, polymer materials. In cross-section the dielectric and conducting layers may be made as concentric circles. The manufacturing method for the above metal-dielectric structure includes assembly, overstretching, stacking to the unit, at that upon multiple overstretching vacuum filling with conducting materials is performed, and butt ends are etched on selective basis with different chemical composites and then they are metalised.

EFFECT: invention allows increasing capacitance and breakdown voltage for capacitors.

5 cl, 7 dwg