UNIT FOR GROWTH OF SAPPHIRE MONOCRYSTALS BY KYROPOULOS METHOD Russian patent published in 2015 - IPC C30B17/00 C30B15/28 C30B29/20 

FIELD: metallurgy.

SUBSTANCE: unit contains vacuum crystallisation chamber 17, heater, crucible with melt, heater thermal insulation, rotated water cooled stock 8 with seed crystal, stock 8 has flange connected with long-stroke bellows 16, its bottom part is tightly connected with the crystallisation chamber 17, and crystal weight sensor 5, at that the water cooled stock 8 is suspended directly on the weight sensor 5, secured outside the crystallisation chamber 17, and is tightly separated from it by the compensating bellows 9 and vacuum rotation input 15, passes through the hollow shaft of the vacuum rotation input 15 without contact with internal walls of the hollow shaft, the water cooled stock 8 if rotated together with the weight sensor 5, cooling water enters the stock 8 from the rotating connection 1 of water flow, contains current collector 2 in electric circuit of the weight sensor. For water supply from the rotating connection 1 in the water cooled stock 8 the soft water hoses 6 are used.

EFFECT: increased accuracy of measurements of the crystal weight and weight rate of the ingot crystallisation.

2 cl, 3 dwg