HEAT TREATMENT FURNACE Russian patent published in 2016 - IPC H01L21/22 

FIELD: metallurgy.

SUBSTANCE: heat treatment furnace for semiconductor substrate includes cylindrical tubular shell, its both ends have apertures of such size that to ensure possibility of insertion and removal of the semiconductor substrates, heater, covers, each of them is detachably installed on the tubular shell, thin gas inlet branch, located at centre of the tubular shell in longitudinal direction, and thin has inlet branch passing through one cover. During continuous heat treatment that includes movement of floating troughs with semiconductor substrates, movement of the first floating trough with heat treated semiconductor substrates from one aperture of the tubular shell, and movement of second floating trough to another aperture of the tubular shell is made at the same time, when has of high degree of cleanness is removed from the thin gas inlet branch located at centre of the tubular shell in longitudinal direction.

EFFECT: reduced time of waiting between batches during successive heat treatment of semiconductors, thus increasing capacity.

8 cl, 10 dwg, 1 tbl