SUBSTRATE THERMAL TREATMENT DEVICE Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: device has reaction chamber provided with working zone 5 accommodating radiation screen 7, flat radiator 8, and substrate holder 9, all placed in sequence one on top of other, and side pockets 6 holding cradles 12 with evaporated material. Cradles 12 are mounted for displacement to chamber working zone. Chamber volume is proportional to oxygen quantity required for converting desired volume of oxide film. Dividing reaction chamber into working zone and side pockets provides for carrying out thermal treatment of substrates without unsealing the device, for example, obtaining substance material oxide from air oxygen contained in chamber, depositing, alloying in residual inert gas atmosphere. EFFECT: enlarged functional capabilities. 1 dwg