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2 524 151

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(51)

IPC

H01L21/223(2006-01-01)

(21) (22)

Application

2013101313/28, 2013-01-10

(24)

Start date

2013-01-10

(22)

Actual filing date

2013-01-10

(45)

Published

2014-07-27

(72)

Inventor

Ismailov Tagir AbdurashidovichShangereeva Bijke AlievnaShangereev Jusup PakhrutdinovichMurtazaliev Azamat Ibragimovich

(73)

Holder

Federal'Noe Gosudarstvennoe Bjudzhetnoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Gosudarstvennyj Tekhnicheskij Universitet"

BORON DIFFUSION METHOD FOR FORMING P-REGION Russian patent published in 2014 - IPC H01L21/223

Abstract RU 2524151 C1

FIELD: chemistry.

SUBSTANCE: in the boron diffusion method, the process is carried out using a gaseous source - diborane (B₂H₆) at temperature of 960°C for 35 minutes at the deposition step, with the following ratio of components: nitrogen N₂=240 l/h, oxygen O₂=120 l/h and hydrogen H₂=7.5 l/h, at the distillation step at temperature of 1100°C for 2 hours. Surface resistance R_s=155±5 ohm/cm.

EFFECT: reduced spread of surface concentration values and obtaining trays that are uniformly doped on the length.

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RU 2 524 151 C1

Authors

Ismailov Tagir Abdurashidovich

Shangereeva Bijke Alievna

Shangereev Jusup Pakhrutdinovich

Murtazaliev Azamat Ibragimovich

Dates

2014-07-27—Published

2013-01-10—Filed