FIELD: chemistry.
SUBSTANCE: invention relates to composition for photoresist removal after ionic implantation, which contains: (a) amine, (b) organic solvent A, and (c) co-solvent, where content of water in composition constitutes less than 0.5 wt % of composition; amine represents quaternary ammonium hydroxide and is present in quantity from 1 to 4 wt % of composition; organic solvent A is selected from the group, consisting of dimethylsulphoxide (DMSO), dimethylsulphone (DMSO2), 1-methyl-2-pyrrolidinone (NMP), γ-butirolactone (BLO)(GBL), ethylmethylketone, 2-pentanone, 3-pentanone, 2-hexanone and isobutylmethylketone, 1-propanol, 2-propanol, butyl alcohol, pentanol, 1-hexanol, 1-heptanol, 1-octanol, ethyldiglycol (EDG), butyldiglycol (BDG), benzyl alcohol, benzaldehyde, N,N-dimethylethanolamine, di-n-propylamine, tri-n-propylamine, isobutylamine, sec-butylamine, cyclohexylamine, methylalanine, o-toluidine, m-toluidine, o-chloroaniline, m-chloroaniline, octylamine, N,N,-diethylhydroxylamine, N,N,-dimethylformamide and their combination; co-solvent is selected from the group, consisting of isopropyl alcohols, isobutylalcohols, sec-butyl alcohols, tert-pentyl alcohols, ethyleneglycol (EG), propyleneglycol, 1,2-propanediol, 1,3-propanediol, 1,2,3-propanediol, 1-amino-2-propanol, 2-methylamino-ethanol (NMEA), N-ethyldiisopropylamine and their combination; and quantity of organic solvent A and co-solvent constitutes 84, 90-99 wt %. Claimed invention also relates to method for photoresist removal after ionic implantation.
EFFECT: obtaining water-free composition for photoresist removal after ionic implantation.
11 cl, 2 dwg, 5 tbl, 5 ex
