FIELD: electricity.
SUBSTANCE: invention is related to manufacturing method of electric devices that includes the following stages: 1) application of insulating dielectric layer consisting of one material with low and ultralow dielectric permeability to substrate surface; 2) application of positive or negative resist coating to surface of insulating dielectric layer; 3) subject of resist coating to selective impact of electromagnetic radiation or corpuscular radiation; 4) development of selective radiated resist coating in order to form a pattern in resist; 5) dry etching of insulating dielectric layer using pattern in resist as mask for formation of wire channels and/or feedthrough openings communicated with substrate surface; 6) selection of at least one polar organic solution (A) from the group consisting of diethylenetriamine, N-methyl imidazole, 3-amine-1-propanol, 5-amine-1-pentanol and dimethyl sulfoxide developing in presence of 0.06 up to 4 wt % of dissolved hydroxide tetramethylammonium (B), which mass fraction is taken on the basis of full weight of the respective tested solution, permanent intensity of removal at 50°C for polymer barrier antireflecting coating with thickness of 30nm that contains chromophoric groups absorbing deep UV light; 7) provision of at least one composite for resist removal that does not contain N-alkyl pyrrolidone and hydroxylamine and hydroxylamine derivants and has dynamic shear viscosity at 50°C from 1 up to 10mPa·s measured by rotating-cylinder technique, and contains, based on the full weight of the composite, (A) from 40 up to 99.95 wt % of at least one polar organic solution selected in compliance with the process stage (6), (B) from 0.05 up to <0.5 wt % of at least one quaternary ammonium hydroxide, based on full weight of the composite, and (C) < 5 wt % of water, based on full weight of the composite; 8) removal of resist pattern and smutty residue by means of damp process using at least one composite for resist removal (7) produced in compliance with the process stage (7); and 9) filling of wire channels (5) and feedthrough openings (5) with at least one material having low electric resistance. The invention is also related to usage of this composite.
EFFECT: composite is capable of removal of positive and negative photo resists and PER in identical and the most advantageous way without damage of surface layers of wafers, relief structures of wafers and gluing material connecting thin silicon wafers with substrates.
14 cl, 3 tbl, 4 ex
