METHOD OF PRODUCING SILICON Russian patent published in 2016 - IPC C01B33/02 C01B33/23 C01B33/37 C30B30/00 C30B29/06 

Abstract RU 2592629 C1

FIELD: metallurgy.

SUBSTANCE: invention relates to processing of siliceous rocks in production of semiconductor materials, which can be used for making solar collectors and elements of electronic equipment. Method involves breaking down and processing siliceous rock to produce silica powder, irradiation, cleaning and reduction to silicon, wherein after irradiation powdered silica is subjected to tempering at 950-1,000 °C in a protective or reducing medium.

EFFECT: invention increases depth of decomposition of ore components by affecting kinetics of decomposition of raw material at early stage of production of silicon, reduces concentration of impurities and power consumption when grinding.

1 cl, 4 tbl, 4 ex

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Authors

Chesnokov Boris Pavlovich

Naumova Olga Valerevna

Frantskevich Denis Igorevich

Chernova Veronika Alekseevna

Bigulov Artur Vasilevich

Dates

2016-07-27Published

2015-07-23Filed