METHOD OF PRODUCING SILICON Russian patent published in 2012 - IPC C01B33/02 C30B29/06 C30B30/00 

FIELD: metallurgy.

SUBSTANCE: invention is related to metallurgical industry, in particular, to the treatment of siliceous rocks to produce semiconductor silicon, which can be used in manufacturing solar cells and in electronics. The method includes the destruction and treatment of siliceous rocks, recovery of silica in the electric furnace to silicon, chemical and metallurgical purification and grinding to powder, while at the recovery stage, silica is additionally irradiated with a gamma-ray integral dose of 1·10²- 1·10⁶ Gy or a neutron dose of 1·10⁸-1·10¹³ neutron/cm².

EFFECT: increased decomposition depth of the ore components, reduced impurity concentration and energy expenditure during grinding.

1 tbl, 4 ex, 1 dwg