FIELD: manufacturing technology.
SUBSTANCE: invention relates to growing monocrystals from a liquid melt using Czochralski's method. Growing a crystal with radius r is first performed using the Czochralski's method by drawing from fixed pot with radius R1, so that 
where ρhd - density of the crystal, ρl - is density of the melt. Produced crystal is tore off the melt and cooled to room temperature in a growth chamber. Then, the growth chamber is opened, the pot is removed from the heater replaced with a pot of smaller radius R2, such that 
thereafter the chamber is closed, temperature is raised to melting point, crystal is lowered to contact with the melt and the crystal is again grown by its permanent downward movement.
EFFECT: technical result is improved structural perfection of grown crystals due to reduction of residual mechanical stresses and reduction of density of dislocations.
1 cl, 6 dwg, 2 ex
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