METHOD OF GROWING GERMANIUM MONOCRYSTALS Russian patent published in 2015 - IPC C30B15/20 C30B29/08 

Abstract RU 2565701 C1

FIELD: physics.

SUBSTANCE: when drawing, linear displacement of the crystal is carried out at a rate of 0.6-0.9 mm/min in cycles, wherein monocrystals are drawn from a melt upwards, followed by lowering the monocrystal into the melt. The ratio of linear displacement upwards and downwards is 2:1. The value of absolute displacement upwards h in one cycle is calculated using a mathematical formula of the ratio of the crucible diameter to the crystal diameter, in mm: h is less than or equal to 1.5Dcrucible/Dcrystal.

EFFECT: method enables to obtain germanium crystals with a low dislocation density.

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RU 2 565 701 C1

Authors

Kaplunov Ivan Aleksandrovich

Kolesnikov Aleksandr Igorevich

Kolesnikova Ol'Ga Jur'Evna

Dates

2015-10-20Published

2014-12-03Filed