FIELD: growing single crystals from melt.
SUBSTANCE: single crystal growing involves programming of growing process with respect to rotating speed of crucible and crystal seed, crystal being pulled in the process at angle b to vertical line corresponding to desired crystallographic direction; angle b is dictated by condition 0.2 arcsine (h/b) ≤ b ≤ 0.8 arcsine (h/d), where d is crystal diameter; h is capillary constant, 
; ς is surface tension of melt; ρ is melt density; g is gravitational acceleration.
EFFECT: enhanced uniformity of single crystals obtained with respect to distribution of impurities at minimal concentration of defects.
1 cl, 1 dwg, 6 ex
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