CZOCHRALSKI'S METHOD OF GROWING PARATELLURITE MONOCRYSTALS FROM LIQUID MELT Russian patent published in 2008 - IPC C30B15/20 C30B29/16 

FIELD: chemistry.

SUBSTANCE: invention pertains to the technology of growing paratellurite monocrystals from a liquid melt using Czochralski's method. The crystals are grown in an immovable crucible with programmed speed of drawing rotation of the inoculant. After obtaining the required diameter, the cylindrical part of the crystal is drawn at rotation speeds corresponding to the range of Reynolds number Re=100-150, calculated using the formula Re=ω·r(R-r)/ν, where ω is the speed of rotation of the inoculant (s^-1), R is the radius of the crucible (cm), r is the radius of the crystal (cm), ν is the kinematic viscosity of the liquid melt (cm²•s^-1), for which at the surface of the liquid melt there is a stable system two, circulating around the crystal, diametrically opposite convection cells (Taylor's rotor) of super cooled liquid melt with a darker colour than the rest of the surface of the liquid melt. The invention allows for improving the structure of the crystals with increase in their size at the same time.

EFFECT: obtained crystals have high optical homogeneity, minimum level of radiation scattering and have minimum concentration of structural defects.

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