FIELD: chemistry.
SUBSTANCE: invention relates to methods of detecting of structural defects of crystals and may be used for investigation of dislocation structure and quality control of germanium crystals. Method of determining density of dislocations in germanium monocrystals by profilometry involves examination of surface of specimen of germanium crystal, processed in selective etching agent, and monitoring etching figures using an interference profilometer. During scanning and production of 3D surface profile said areas are subjected to profilometric analysis, and when producing local 2D profiles assessment and calculation of minima is carried out, which are bottom of etching pits at outlet of dislocations and based on 3D and 2D profiles, conclusion is made on associating/not associating pits to dislocation pits.
EFFECT: high accuracy and information value of calculation of density of dislocations.
1 cl, 4 dwg
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