FIELD: semiconductor engineering. SUBSTANCE: method involves deformation of crystals, their firing in deformed state, post-firing chemical etching, and metallographic inspection. Deformation is effected by covering surface of crystal under inspection with germanium monoxide film and then with silicon monoxide or dioxide film above the latter. Films are of different thickness. After firing, films are removed by chemical etching. EFFECT: facilitated procedure. 2 tbl, 2 ex
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